Dram Technology

The 16 Meg x 4 DRAM MT4LC16M4G3 MT4LC16M4H9 is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized as 16,777,216 locations con- taining 4 bits each. The 16,777,216 memory locations are arranged in 4,096 rows by 4,096 columns on the H9 version and 8,192 rows by 2,048 columns on the G3 version. During READ or WRITE cycles, each location is uniquely addressed via the address bits. First, the row address is latched by the RAS# signal, then the column address is latched by CAS#. The device provides EDO- PAGE-MODE operation, allowing for fast successive data operations (READ, WRITE, or READ-MODIFY- WRITE) within a given row. By Micron Semiconductor Products
MT4LC16M4G3 's PackagesMT4LC16M4G3 's pdf datasheet

MT4LC16M4G3 Pinout, Pinouts
MT4LC16M4G3 pinout,Pin out
This is one package pinout of MT4LC16M4G3,If you need more pinouts please download MT4LC16M4G3's pdf datasheet.

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