Dram Technology

The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits organized in a x16 configuration. The MT4LC4M16F5 is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row- address bits (A0-A11) and 10 column-address bits (A0- A9). In addition, both byte and word accesses are supported via the two CAS# pins (CASL# and CASH#). By Micron Semiconductor Products
MT4LC4M16F5 's PackagesMT4LC4M16F5 's pdf datasheet



MT4LC4M16F5 Pinout, Pinouts
MT4LC4M16F5 pinout,Pin out
This is one package pinout of MT4LC4M16F5,If you need more pinouts please download MT4LC4M16F5's pdf datasheet.

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