Dram Technology

The 4 Meg x 16 DRAM MT4LC4M16R6 MT4LC4M16N3 is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns on the MT4LC4M16R6 or 8,192 rows by 512 columns on the MT4LC4M16N3. During READ or WRITE cycles, each location is uniquely addressed via the address bits: 12 row-address bits (A0-A11) and 10 column-address bits (A0-A9) on the MT4LC4M16R6 or 13 row-address bits (A0-A12) and 9 column-address bits (A0-A8) on the MT4LC4M16N3 version. In addition, both byte and word accesses are supported via the two CAS# pins (CASL# and CASH#). By Micron Semiconductor Products
MT4LC4M16R6 's PackagesMT4LC4M16R6 's pdf datasheet
MT4LC4M16N3




MT4LC4M16R6 Pinout, Pinouts
MT4LC4M16R6 pinout,Pin out
This is one package pinout of MT4LC4M16R6,If you need more pinouts please download MT4LC4M16R6's pdf datasheet.

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