Power MOSFET 2 A, 500 V, P-Channel D2PAK

P-Channel MTB2P50E Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
By ON Semiconductor
MTB2P50E 's PackagesMTB2P50E 's pdf datasheet

MTB2P50E Pinout, Pinouts
MTB2P50E pinout,Pin out
This is one package pinout of MTB2P50E,If you need more pinouts please download MTB2P50E's pdf datasheet.

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