TMOS POWER FET 3.0 AMPERES 1200 VOLTSThe D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltageblocking capability without degrading perfor-
mance over time. In addition, this advanced By Freescale Semiconductor, Inc
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| MTB3N120E Pb-Free | MTB3N120E Cross Reference | MTB3N120E Schematic | MTB3N120E Distributor |
| MTB3N120E Application Notes | MTB3N120E RoHS | MTB3N120E Circuits | MTB3N120E footprint |
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