Tmos Power Fet 1.0 Amperes 800 Volts Rds(on) = 12 Ohm , Inc

This high voltage MOSFET MTD1N80E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTD1N80E 's PackagesMTD1N80E 's pdf datasheet

MTD1N80E Pinout, Pinouts
MTD1N80E pinout,Pin out
This is one package pinout of MTD1N80E,If you need more pinouts please download MTD1N80E's pdf datasheet.

MTD1N80E Application circuits
MTD1N80E circuits
This is one application circuit of MTD1N80E,If you need more circuits,please download MTD1N80E's pdf datasheet.

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