Tmos Power Fet 12 Amperes 60 Volts Rds(on) = 0.15 Ohm , Inc

TMOS V MTD3055V is a new technology designed to achieve an onresis- tance area product about onehalf that of standard MOSFETs This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTD3055V 's PackagesMTD3055V 's pdf datasheet

MTD3055V Pinout, Pinouts
MTD3055V pinout,Pin out
This is one package pinout of MTD3055V,If you need more pinouts please download MTD3055V's pdf datasheet.

MTD3055V Application circuits
MTD3055V circuits
This is one application circuit of MTD3055V,If you need more circuits,please download MTD3055V's pdf datasheet.

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