Tmos Power Fet 4.0 Amperes 200 Volts Rds(on) = 1.2 Ohm , Inc

This advanced TMOS EFET MTD4N20E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTD4N20E 's PackagesMTD4N20E 's pdf datasheet



MTD4N20E Pinout, Pinouts
MTD4N20E pinout,Pin out
This is one package pinout of MTD4N20E,If you need more pinouts please download MTD4N20E's pdf datasheet.

MTD4N20E Application circuits
MTD4N20E circuits
This is one application circuit of MTD4N20E,If you need more circuits,please download MTD4N20E's pdf datasheet.


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