Tmos Power Fet 5.0 Amperes 250 Volts Rds(on) = 1.0 Ohm , Inc

This advanced TMOS EFET MTD5N25E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc