Tmos Power Fet 8.0 Amperes 60 Volts Rds(on) = 0.12 Ohm , Inc

This advanced TMOS EFET MTD8N06E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTD8N06E 's PackagesMTD8N06E 's pdf datasheet



MTD8N06E Pinout, Pinouts
MTD8N06E pinout,Pin out
This is one package pinout of MTD8N06E,If you need more pinouts please download MTD8N06E's pdf datasheet.

MTD8N06E Application circuits
MTD8N06E circuits
This is one application circuit of MTD8N06E,If you need more circuits,please download MTD8N06E's pdf datasheet.


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