TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a By Freescale Semiconductor, Inc
MTP1N50E 's PackagesMTP1N50E 's pdf datasheet
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MTP1N50E Pinout, Pinouts
MTP1N50E pinout,Pin out
This is one package pinout of MTP1N50E,If you need more pinouts please download MTP1N50E's pdf datasheet.

MTP1N50E Application circuits
MTP1N50E circuits
This is one application circuit of MTP1N50E,If you need more circuits,please download MTP1N50E's pdf datasheet.


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