TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMSTMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS MTP3N50E ,This advanced high voltage TMOS EFET is designed to
withstand high energy in the avalanche mode and Switch efficiently.
This new high energy device also offers a draintosource Diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive By Freescale Semiconductor, Inc
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| MTP3N50E Pb-Free | MTP3N50E Cross Reference | MTP3N50E Schematic | MTP3N50E Distributor |
| MTP3N50E Application Notes | MTP3N50E RoHS | MTP3N50E Circuits | MTP3N50E footprint |
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