TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHMTMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM MTP4N40E ,This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltageblocking capability without
degrading performance over time. In addition, this advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
draintosource Diode with a fast recovery time. By Freescale Semiconductor, Inc
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| MTP4N40E Pb-Free | MTP4N40E Cross Reference | MTP4N40E Schematic | MTP4N40E Distributor |
| MTP4N40E Application Notes | MTP4N40E RoHS | MTP4N40E Circuits | MTP4N40E footprint |
