Tmos Power Fet 32 Amperes 200 Volts Rds(on) = 0.075 Ohm , Inc

This high voltage MOSFET MTV32N20E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for high speed switching applications in power supplies, converters, PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTV32N20E 's PackagesMTV32N20E 's pdf datasheet

MTV32N20E Pinout, Pinouts
MTV32N20E pinout,Pin out
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