Tmos Power Fet 32 Amperes 250 Volts Rds(on) = 0.08 Ohm , IncThis advanced TMOS EFET MTW32N25E is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource Diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where Diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients. By Freescale Semiconductor, Inc
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MTW32N25E Pb-Free | MTW32N25E Cross Reference | MTW32N25E Schematic | MTW32N25E Distributor |
MTW32N25E Application Notes | MTW32N25E RoHS | MTW32N25E Circuits | MTW32N25E footprint |