Tmos Power Fet 33 Amperes 100 Volts Rds(on) = 0.06 Ohm , Inc

This advanced TMOS E-FET MTW33N10E is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source Diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTW33N10E 's PackagesMTW33N10E 's pdf datasheet



MTW33N10E Pinout, Pinouts
MTW33N10E pinout,Pin out
This is one package pinout of MTW33N10E,If you need more pinouts please download MTW33N10E's pdf datasheet.

MTW33N10E Application circuits
MTW33N10E circuits
This is one application circuit of MTW33N10E,If you need more circuits,please download MTW33N10E's pdf datasheet.


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