Tmos Power Fet 6.0 Amperes 1000 Volts Rds(on) = 1.5 Ohm , Inc

This high voltage MOSFET MTW6N100E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTW6N100E 's PackagesMTW6N100E 's pdf datasheet



MTW6N100E Pinout, Pinouts
MTW6N100E pinout,Pin out
This is one package pinout of MTW6N100E,If you need more pinouts please download MTW6N100E's pdf datasheet.

MTW6N100E Application circuits
MTW6N100E circuits
This is one application circuit of MTW6N100E,If you need more circuits,please download MTW6N100E's pdf datasheet.


Related Electronics Part Number

Related Keywords:

MTW6N100E Pb-Free MTW6N100E Cross Reference MTW6N100E Schematic MTW6N100E Distributor
MTW6N100E Application Notes MTW6N100E RoHS MTW6N100E Circuits MTW6N100E footprint