Tmos Power Fet 8.0 Amperes 600 Volts Rds(on) = 0.55 Ohm , Inc

This high voltage MOSFET MTW8N60E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource Diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. By Freescale Semiconductor, Inc
MTW8N60E 's PackagesMTW8N60E 's pdf datasheet

MTW8N60E Pinout, Pinouts
MTW8N60E pinout,Pin out
This is one package pinout of MTW8N60E,If you need more pinouts please download MTW8N60E's pdf datasheet.

MTW8N60E Application circuits
MTW8N60E circuits
This is one application circuit of MTW8N60E,If you need more circuits,please download MTW8N60E's pdf datasheet.

Related Electronics Part Number

Related Keywords:

MTW8N60E Pb-Free MTW8N60E Cross Reference MTW8N60E Schematic MTW8N60E Distributor
MTW8N60E Application Notes MTW8N60E RoHS MTW8N60E Circuits MTW8N60E footprint