Tmos Power Fet 100 Amperes 100 Volts Rds(on) = 0.011 Ohm , Inc

This advanced TMOS power FET MTY100N10E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource Diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM Motor Controls and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
MTY100N10E 's PackagesMTY100N10E 's pdf datasheet



MTY100N10E Pinout, Pinouts
MTY100N10E pinout,Pin out
This is one package pinout of MTY100N10E,If you need more pinouts please download MTY100N10E's pdf datasheet.

MTY100N10E Application circuits
MTY100N10E circuits
This is one application circuit of MTY100N10E,If you need more circuits,please download MTY100N10E's pdf datasheet.


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