Tmos Power Fet 10 Amperes 1000 Volts Rds(on) = 1.3 Ohm , IncThis high voltage MOSFET MTY10N100E uses an advanced termination
scheme to provide enhanced voltageblocking capability without
degrading performance over time. In addition, this advanced TMOS
EFET is designed to withstand high energy in the avalanche and
commutation modes. Designed for high voltage and high speed
switching applications in power supplies, converters and PWM
Motor Controls these devices are particularly well suited for bridge
circuits where Diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
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MTY10N100E Pb-Free | MTY10N100E Cross Reference | MTY10N100E Schematic | MTY10N100E Distributor |
MTY10N100E Application Notes | MTY10N100E RoHS | MTY10N100E Circuits | MTY10N100E footprint |