Tmos Power Fet 10 Amperes 1000 Volts Rds(on) = 1.3 Ohm , Inc

This high voltage MOSFET MTY10N100E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage and high speed switching applications in power supplies, converters and PWM Motor Controls these devices are particularly well suited for bridge circuits where Diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
MTY10N100E 's PackagesMTY10N100E 's pdf datasheet



MTY10N100E Pinout, Pinouts
MTY10N100E pinout,Pin out
This is one package pinout of MTY10N100E,If you need more pinouts please download MTY10N100E's pdf datasheet.

MTY10N100E Application circuits
MTY10N100E circuits
This is one application circuit of MTY10N100E,If you need more circuits,please download MTY10N100E's pdf datasheet.


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