Tmos Power Fet 14 Amperes 1000 Volts Rds(on) = 0.80 Ohm , IncThis advanced TMOS power FET MTY14N100E is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a draintosource Diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM Motor Controls and
other inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
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MTY14N100E Pb-Free | MTY14N100E Cross Reference | MTY14N100E Schematic | MTY14N100E Distributor |
MTY14N100E Application Notes | MTY14N100E RoHS | MTY14N100E Circuits | MTY14N100E footprint |