Tmos Power Fet 14 Amperes 1000 Volts Rds(on) = 0.80 Ohm , Inc

This advanced TMOS power FET MTY14N100E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource Diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM Motor Controls and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
MTY14N100E 's PackagesMTY14N100E 's pdf datasheet

MTY14N100E Pinout, Pinouts
MTY14N100E pinout,Pin out
This is one package pinout of MTY14N100E,If you need more pinouts please download MTY14N100E's pdf datasheet.

MTY14N100E Application circuits
MTY14N100E circuits
This is one application circuit of MTY14N100E,If you need more circuits,please download MTY14N100E's pdf datasheet.

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