Tmos Power Fet 25 Amperes 600 Volts Rds(on) = 0.21 Ohm , IncThis advanced TMOS power FET MTY25N60E is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a draintosource Diode with fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM Motor Controls
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Specified
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
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MTY25N60E Pb-Free | MTY25N60E Cross Reference | MTY25N60E Schematic | MTY25N60E Distributor |
MTY25N60E Application Notes | MTY25N60E RoHS | MTY25N60E Circuits | MTY25N60E footprint |