Tmos Power Fet 30 Amperes 500 Volts Rds(on) = 0.15 Ohm , Inc

This advanced TMOS power FET MTY30N50E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource Diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM Motor Controls and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
MTY30N50E 's PackagesMTY30N50E 's pdf datasheet

MTY30N50E Pinout, Pinouts
MTY30N50E pinout,Pin out
This is one package pinout of MTY30N50E,If you need more pinouts please download MTY30N50E's pdf datasheet.

MTY30N50E Application circuits
MTY30N50E circuits
This is one application circuit of MTY30N50E,If you need more circuits,please download MTY30N50E's pdf datasheet.

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