Tmos Power Fet 55 Amperes 200 Volts Rds(on) = 0.028 Ohm , Inc

This advanced TMOS power FET MTY55N20E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource Diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM Motor Controls and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature By Freescale Semiconductor, Inc
MTY55N20E 's PackagesMTY55N20E 's pdf datasheet

MTY55N20E Pinout, Pinouts
MTY55N20E pinout,Pin out
This is one package pinout of MTY55N20E,If you need more pinouts please download MTY55N20E's pdf datasheet.

MTY55N20E Application circuits
MTY55N20E circuits
This is one application circuit of MTY55N20E,If you need more circuits,please download MTY55N20E's pdf datasheet.

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