0.5 – 4 GHz Packaged FET

the MWT-1789SB is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high linearity driver or high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G Wireless infrastructure standards, such as GSM, TDMA, CDMA Edge, cdma2000, WCDMA, TD- SCDMA, and UMTS base stations. This product is alsoideal for high data rate Wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product CAN be used for point-to- point Microwave Communications links. The third order intercept performance of the MwT-1789SBis excellent, typically 16 dB above the 1 dB power gain compression point. The NF is as low as 1.0 dB at900 MHz. The chip is produced using MwT's proprietary high linearity device design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability. By MicroWave Technology, Inc.
MWT-1789SB 's PackagesMWT-1789SB 's pdf datasheet

MWT-1789SB Pinout, Pinouts
MWT-1789SB pinout,Pin out
This is one package pinout of MWT-1789SB,If you need more pinouts please download MWT-1789SB's pdf datasheet.

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