DC –4 GHz Packaged FET Data Sheet

The MWT-17Q3 is a high linearity GaAs MESFET device in low cost QFN3X3 package that is ideally suited for high linearity driver, PA (Power Amplifier), and high dynamic range LNA applications. The applications include 2G, 2.5G, and 3G Wireless infrastructure standards, such as GSM, TDMA, CDMA Edge, CDMA2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also idea for high data rate Wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product CAN be used for point-to-point Microwave Communications links. The third order intercept performance of the MWT-17Q3 is excellent, typically 18 dB above the 1 dB power gain compression point. The noise figure is as low as 0.8 dB at 900 MHz. The chip is produced using MwT's proprietary high linearity device design. It also uses MwT reliable metallization process. All chips are passivated using MwT's patented "Diamond- Like Carbon" process for increased durability. By MicroWave Technology, Inc.
MWT-17Q3 's PackagesMWT-17Q3 's pdf datasheet



MWT-17Q3 Pinout, Pinouts
MWT-17Q3 pinout,Pin out
This is one package pinout of MWT-17Q3,If you need more pinouts please download MWT-17Q3's pdf datasheet.

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