26 GHz High Power GaAs FET

The MWT-2 is a GaAs MESFET device whose nominal quarter-micron Gate length and 630 micron Gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with power outputs ranging from 100 to 200 milli-watts. The straight geometry of the MWT-2 makes it equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using MwTs reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwTs patented Diamond-Like Carbon process for increased durability, Designers CAN use MwTs unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation. By MicroWave Technology, Inc.
MWT-2 's PackagesMWT-2 's pdf datasheet



MWT-2 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
MWT-2 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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