18 GHz High Power GaAs FET

The MWT-6 is a GaAs MESFET is ideally suited to narrow-band applications such as cellular telephone, PCN, point-to-point communica- tions links, and other Wireless applications as the driver Transistor for the output power Amplifier The third-order intercept performance of the MWT-6 is excellent, typically 12 dB above the 1 dB compression point. The chip is produced using MwTs reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwTs patented Diamond-Like Carbon process for increased durability, Designers CAN use MwTs unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation By MicroWave Technology, Inc.