18 GHz High Power GaAs FET

The MWT-9 is a GaAs MESFET device whose nominal quarter-micron Gate length and 750 micron Gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 18 GHz frequency range with power output ranging from +24 to +26 dBm. It CAN be easily matched as the driver stage in high power Communications Amplifiers or in broad-band military Amplifiers and operated at reduced bias in battery powered Wireless Communications devices. The chip is produced using MwTs reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwTs patented Diamond-Like Carbon process for increased durability, Designers CAN use MwTs unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation. By MicroWave Technology, Inc.
MWT-9 's PackagesMWT-9 's pdf datasheet



MWT-9 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
MWT-9 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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