18 GHz High Gain, Low Noise GaAs FET

The MWT-A9 is a GaAs MESFET device whose nominal quarter-micron Gate length and 750 micron Gate width make it ideally suited to applications requiring high-gain in the 500 MHz to 18 GHz frequency range with moderate power output while exhibiting low noise figure. The chip is produced using MwTs reliable metal system and devices from each wafer are screened to insure reliability. All chips are passivated using MwTs patented Diamond-Like Carbon process for increased durability, Designers CAN use MwTs unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit operation. By MicroWave Technology, Inc.
MWT-A9 's PackagesMWT-A9 's pdf datasheet



MWT-A9 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
MWT-A9 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

MWT-A9 Pb-Free MWT-A9 Cross Reference MWT-A9 Schematic MWT-A9 Distributor
MWT-A9 Application Notes MWT-A9 RoHS MWT-A9 Circuits MWT-A9 footprint