30 GHz High Gain, Dual Gate AlGaAs/InGaAs PHEMT Preliminary Data Sheet

he MWT-PH5 is a dual Gate AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron Gate length and 300 micron Gate width make it ideally suited for applications requiring high-gain and power up to 30 GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using MwT's reliable metal systems and all devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability. By MicroWave Technology, Inc.
MWT-PH5 's PackagesMWT-PH5 's pdf datasheet

MWT-PH5 Pinout, Pinouts
MWT-PH5 pinout,Pin out
This is one package pinout of MWT-PH5,If you need more pinouts please download MWT-PH5's pdf datasheet.

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