Macronix Nbit Tm Memory Family 128m [x8/x16] Single 3v Page Mode Eliteflash Tm Memory

The MXIC's MX26F128J3 series eLiteFlashTM memory use the most advance 2 bits/cell Nbit technology, double the storage capacity of memory cell. The device provide the high density eLiteFlashTM memory solution with reli- able performance and most cost-effective. The device organized as by 8 bits or by 16 bits of output bus. The device is packaged in 56-Lead TSOP and 64- ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The device offers fast access time and allowing opera- tion of high-speed Microprocessors without wait states. To eliminate bus contention, the device has separate chip enable (CE0, CE1, CE2) and output enable (OE) con- trols. The device augment EPROM functionality with in- circuit electrical erasure and programming. The device uses a command Register to manage this functionality. The MXIC's Nbit technology reliably stores memory con- tents even after the specific erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms by utilizing the dielectric's charac- ter to trap or release charges from ONO layer. The device uses a 3.0V to 3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algo- rithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V By Unkown
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MX26F128J3 Pinout, Pinouts
MX26F128J3 pinout,Pin out
This is one package pinout of MX26F128J3,If you need more pinouts please download MX26F128J3's pdf datasheet.

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