• Product pinout
  • Description
  • DS2502,DS2502 1kb Add-Only Memory
  • The DS2502 1 kbit Add-Only Memory identifies and stores relevant information about the product to which it is associated. This lot- or product-specific information can be accessed with minimal interfacefor example, a single port pin of a microcontroller. The ...
  • DS2505,DS2505 16-kbit Add-Only Memory
  • The DS2505 16-kbit AddOnly Memory identifies and stores relevant information about the product to which it is associated. This lot or product specific information can be accessed with minimal interface, for example a single port pin of a microcontroller. The ...
  • DS2506,DS2506 64kb Add-Only Memory
  • The DS2506 is a 64k-bit 1-Wire EPROM. Like all 1-Wire devices, the DS2506 consists of a factory-lasered 64-bit ROM registration number that includes a unique 48-bit serial number, an 8-bit CRC, and an 8-bit family code (0FH) plus 64kb of user-programmable ...
  • DS1993,DS1992, DS1993 1kb/4kb Memory IButton
  • The DS1992/DS1993 memory iButtons (hereafter referred to as DS199_) are rugged read/write data carriers that act as a localized database, easily accessible with minimal hardware. The nonvolatile memory and optional timekeeping capability offer a simple ...
  • DS1996,DS1996 64-kbit Memory IButton�
  • The DS1996 Memory iButton is a rugged read/write data carrier that acts as a localized database that can be easily accessed with minimal hardware. The nonvolatile memory offers a simple solution to storing and retrieving vital information pertaining to the ...
  • K1S5616BCM,256Mb (16M X 16 Bit) UtRAM
  • The K1S5616BCM is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also ...
  • K1S2816BCA,128Mb (8M X 16 Bit) UtRAM
  • The K1S2816BCA is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also ...
  • K1S6416BCD,64Mb (4M X 16 Bit) UtRAM
  • The K1S6416BCD is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device also supports internal Temperature Compensated Self Refresh mode for ...
  • K1S6416B9D,64Mb (4M X 16 Bit) Multiplexed UtRAM
  • The K1S6416B9D is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports Industrial temperature range. The device supports internal TCSR(Temperature Compensated Self Refresh) for the standby power saving at ...
  • K1S3216BCE,32Mb (2M X 16 Bit) UtRAM
  • The K1S3216BCE is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device also supports internal Temperature Compensated Self Refresh mode for ...
  • K1S3216B9E,32Mb (2M X 16 Bit) Multiplexed UtRAM
  • The K1S3216B9E is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports Industrial temperature range. The device supports internal TCSR(Temperature Compensated Self Refresh) for the standby power saving at ...
  • K1S3216B1C,2Mx16 Bit Uni-Transistor Random Access Memory
  • The K1S3216B1C is fabricated by SAMSUNG advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip ...
  • K1S1616B9B,16Mb (1M X 16 Bit) Multiplexed UtRAM
  • The K1S1616B9B is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports Industrial temperature range. The device supports internal TCSR(Temperature Compensated Self Refresh) for the standby power saving at ...
  • K1S1616B1B,16Mb (1M X 16 Bit) UtRAM
  • The K1S1616B1B is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports Industrial temperature range. The device also supports internal Temperature Compensated Self Refresh mode for the standby power saving ...
  • K1S56161CM,256Mb (16M X 16 Bit) UtRAM
  • The K1S56161CM is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also ...
  • K1S28161CA,128Mb (8M X 16 Bit) UtRAM
  • The K1S28161CA is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device also ...
  • K1S64161CD,64Mb (4M X 16 Bit) UtRAM
  • The K1S64161CD is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device also supports internal Temperature Compensated Self Refresh mode for ...
  • K1S32161CE,32Mb (2M X 16 Bit) UtRAM
  • The K1S32161CE is fabricated by SAMSUNGs advanced CMOS tecnology using one transistor memory cell. The device sup- ports 4 page read operation and Industrial temperature range. The device also supports internal Temperature Compensated Self Refresh mode for ...
  • UPD23C256112A,NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM
  • The UPD23C256112A is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of (512 + 16 (Redundancy)) bytes x 32 pages x 2,048 blocks. TheUPD23C256112A is a serial type mask ...
  • MSM5412222B,MSM5412222B256K X 12-bit Field Memory
  • The OKI MSM5412222B is a high performance 3-Mbit, 256K x 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. MSM5412222B is a FRAM ...
  • MSM54V12222B,MSM54V12222B256K X 12-bit Field Memory
  • The OKI MSM54V12222B is a high performance 3-Mbit, 256K x 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. MSM54V12222B is a ...
  • MSM514262,MSM514262256K X 4 VRAM FPM
  • The MSM548332 is a 3.3-Mbit, 960 bits ,290 lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548332s can be cascaded directly without any delay devices between them. Cascading ...
  • MSM518121A,MSM518121a128 X 8 8-Bit Multiport DRAM
  • The MSM518121A is an 1-Mbit CMOS multiport memory composed of a 131,072-words by 8-bit dynamic random access memory, RAM port, and a 256-word by 8-bit static serial access memory, SAM port. The RAM port and SAM port operate independently and ...
  • MSM518122,MSM518122128K X 8 VRAM FPM
  • The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously. The MSM518122 supports three types of operation: random access to RAM ...
  • MSM518221A,MSM518221A256K X 8 Field Memory
  • The OKI MSM518221A is a high performance 2-Mbit, 256K ,8-bit, Field Memory. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. It is a FRAM for wide or low end use as ...
  • MSM518222A,262,214-Word ?8-Bit Field Memory
  • The OKI MSM518222A is a high performance 2-Mbit, 256K ,8-bit, Field Memory. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. It is a FRAM for wide or low end use as ...
  • MSM51V8221A,MSM51V8221A256K X 8 Field Memory
  • The OKI MSM51V8221A is a high performance 2-Mbit, 256K ,8-bit, Field Memory. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. It is a FRAM for wide or low end use as ...
  • MSM51V8222A,MSM51V8222A256K X 8 Field Memory
  • The OKI MSM51V8222A is a high performance 2-Mbit, 256K ,8-bit, Field Memory. It is designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. It is a FRAM for wide or low end use as ...
  • MSM5416272,MSM5416272256 X 16 Multiport DRAM
  • The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, ...
  • MSM514212,MSM5142125K X 8 Line Memory
  • The OKI MSM514212 is a high-performance serial-line memory. It is designed for use in NTSC, PAL or SECAM Video line buffer applications such as digital comb filters in TVs / VTRs, IDTV (Improved Definition Television), time based correction, or other ...
  • MSM514400D,MSM514400D/DL1M X 4 DRAM, FPM
  • The MSM514400D/ MSM514400DL is a 1,048,576-word x 4-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS technology. The MSM514400D/ MSM514400DL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the ...
  • MSM6688,ADPCM Solid-State Recorder IC
  • The MSM6688 MSM6688L is a \"solid-state recorder\" IC developed using the ADPCM method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and a dedicated register to store ADPCM data, it can record and play back voice data ...
  • MSM66V84B,4,194,304-word X 1-bit Serial Register
  • MSM66V84B is a serial register organized as 4,194,304 words x one bit, characterized by medium-speed, low power consumption operation. This device has a built-in internal address generation circuit allowing continuous serial read/write operation by ...
  • BR34E02FVT-W,DDR/DDR2 (For Memory Module) SPD Memory
  • A serial EEPROM(Electrically Erasable Programmable Read Only Memory) is non-volatile memory that can be overwritten electrically, in units of bytes, and is most suitable for data storage use. ROHM's high reliability serial EEPROMs are among the top of their ...
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