HDPlus devices NIMD6302R2 are an advanced HDTMOS series of power MOSFET which utilize ON Semiconductor\'s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. They are capable of ...
This MOSFET BS108 is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. ...
Power MOSFET NTB18N06L 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB23N03R
23 Amps, 25 Volts
2
N-Channel D PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits. ...
Power MOSFET NTB30N06L 30 Amps, 60 Volts, Logic Level,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB30N06 30 Amps, 60 Volts N Channel D2PAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB45N06 45 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB60N06 60 V, 60 A, N-Channel D2PAK,Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. ...
Power MOSFET NTB85N03 85 Amps, 28 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTB90N02 90 Amps, 24 Volts N-Channel D2Pak,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD18N06L 18 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD20N03L27 20 Amps, 30 Volts,This logic level vertical power MOSFET is a general purpose part that provides the \"best of design\" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The ...
Power MOSFET NTD20N06L 20 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD80N02 24 V, 80 A, N-Channel DPAK,N Channel DPAKDesigned for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD24N06L 24 Amps, 60 Volts, Logic Level, N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055-094 12 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055-150 60 V, 9.0 A, N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055L104 12 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD3055L170 9.0 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTD32N06L 32 Amps, 60 Volts, Logic Level N-Channel DPAK,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTP27N06 27 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
Power MOSFET NTP75N06 75 Amps, 60 Volts,Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. ...
The FDFS6N754 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO-
8 package. This device is designed specifically as a single package
solution for ...
FDFM2N111 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for ...
FDFM2P110 combines the exceptional performance of
Fairchild\'s PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for ...
This device FDFMA3N109 is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications. It features a MOSFET
with low input capacitance, total gate charge and onstate
resistance, and an ...
The FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky diode into a single
surface mount power package. The MOSFET and Schottky
diode are isolated inside the package. The general purpose
pinout has been chosen to ...
This N-Channel 1.8V specified MOSFET FDFC3N108 uses
Fairchilds advanced low voltage PowerTrench process.
It is combined with a low forward drop Schottky that is
isolated from the MOSFET, providing a compact power
solution for battery power management and ...
This device FDMS9620S includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss \"High Side\" MOSFET ...
This NChannel MOSFET FDB8447L has been produced using Fairchild Semiconductor\'s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. ...
30V N-Channel PowerTrench MOSFET FDMS8692 ,The FDMS8692 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r while maintaining excellent ...
These NChannel enhancement mode power field effect transistors FDB14N30 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
This device includes two specialized MOSFETs FDMS9600S in a unique dual
Power 56 package. It is designed to provide an optimal
Synchronous Buck power stage in terms of efficiency and PCB
utilization. The low switching loss \"High Side\" MOSFET is ...
500V N-Channel MOSFET FDPF20N50FT , FRFET,These N-Channel enhancement mode power field effect transistors
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to ...
This NChannel MOSFET FDS8813NZ is produced using Fairchild Semiconductor\'s advanced PowerTrench process that has been especially tailored to minimize the onstate resistance. This device is well suited for Power Management and load switching applications ...
The FDMS8670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the ...
The FDMS8680 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. ...
These N-Channel enhancement mode power field effect
transistors FDD6N50F are produced using Failchild\'s proprietary, planar
stripe, DMOS technology. This advance technology has been especially tailored to
minimize on-state resistance, provide ...
These N-Channel enhancement mode power field effect
transistors FDB12N50TM are produced using Fairchilds proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
These N-Channel enhancement mode power field effect transistors FDP20N50F
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
These N-Channel enhancement mode power field effect transistors FDPF13N50FT
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
These N-Channel enhancement mode power field effect
transistors FDP12N50 are produced using Fairchild\'s proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
These N-Channel enhancement mode power field effect transistors FQPF10N50CF
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advanced technology has been especially tailored to minimize
on-state resistance, provide ...
This N-Channel MOSFET FDPF2710T is produced using Fairchild Semiconductors
advanced PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet
maintain superior switching performance. 25A, 250V, RDS(on) = 36.3m& ...
These N-Channel enhancement mode power field effect transistors FDA33N25
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
This N-channel power MOSFET HUF75344A3 is produced using Fairchild
Semiconductors innovative UItraFET process. This advanced
process technology achieves the lowest possible
on-resistance per silicon area, resulting in outstanding
performance. This device ...
These NChannel enhancement mode power field effect transistors FDP7N50 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
These N-Channel enhancement mode power field effect
transistors FDPF12N50T are produced using Fairchild\'s proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This N-Channel MOSFET FDB8453LZ is produced using Fairchild
Semiconductors advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level. ...
These N-Channel enhancement mode power field effect
transistors FDP80N06 are produced using Fairchilds proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior ...
These N-Channel enhancement mode power field effect transistors FDPF12N50FT
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
These N-Channel enhancement mode power field effect
transistors FDA20N50F are produced using Failchilds proprietary, planar
stripe, DMOS technology. This advance technology has been especially tailored to
minimize on-state resistance, provide superior ...
This N-Channel MOSFET FDP100N10 is producedusing Fairchild Semiconductors
advanced PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet
maintain superior switching performance. ...
This N-Channel MOSFET FDA2712 is produced using Fairchild Semiconductors
advanced PowerTrench process that has been especially
tailored to minimize the on-state resistance and yet maintain
superior switching performance. ...
This N-Channel MOSFET FDP8447L has been produced using Fairchild
Semiconductors proprietary PowerTrench technology to deliver
low rDS(on) and optimized BVDSS capability to offer superior
performance benefit in the application. ...
The FDMS8660AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the ...
These NChannel enhancement mode power field effect transistors FDU3N40 are produced using Fairchild\'s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior ...
The FDMS8662 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. ...
These N-Channel enhancement mode power field effect transistors FDPF52N20T
are produced using Fairchild\'s proprietary, planar stripe,
DMOS technology. This advance technology has been especially tailored to minimize
on-state resistance, provide ...
The FDMS8672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. This
device has the ...
The FDMS8674 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance. ...
These N-Channel enhancement mode power field effect
transistors FDB28N30TM are produced using Fairchilds proprietary, planar
stripe, DMOS technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide ...
This N-Channel MOSFET FDD8780 has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast ...
These N-Channel enhancement mode field effect transistors 2N7002 are produced using Fairchild\'s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast ...
These N-Channel enhancement mode field effect transistors BSS138 are produced using Fairchild\'s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast ...
This N-Channel MOSFET FDS8884 has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast ...
This N-Channel MOSFET FDD8796 has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(on) and fast ...
