1Mb Ultra-Low Power Asynchronous CMOS SRAM

The N01L1618N1A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using AMI Semiconductors advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L1618N1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device CAN operate over a very wide o o temperature range of -40 C to +85 C and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs By AMI Semiconductor, Inc.
N01L1618N1A 's PackagesN01L1618N1A 's pdf datasheet
N01L1618N1AB
N01L1618N1AT
N01L1618N1AB2
N01L1618N1AT2




N01L1618N1A Pinout, Pinouts
N01L1618N1A pinout,Pin out
This is one package pinout of N01L1618N1A,If you need more pinouts please download N01L1618N1A's pdf datasheet.

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