1Mb Ultra-Low Power Asynchronous CMOS SRAMThe N01L63W3A is an integrated memory device
containing a 1 Mbit Static Random Access Memory
organized as 65,536 words by 16 bits. The device
is designed and fabricated using ON
Semiconductors advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N01L63W3A is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device CAN operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 64Kb x 16 SRAMs By ON Semiconductor
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N01L63W3A Pb-Free | N01L63W3A Cross Reference | N01L63W3A Schematic | N01L63W3A Distributor |
N01L63W3A Application Notes | N01L63W3A RoHS | N01L63W3A Circuits | N01L63W3A footprint |