2Mb Ultra-Low Power Asynchronous CMOS SRAM

The N02L1618C1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using AMI Semiconductors advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as AMIs N02L163WN1A which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L1618C1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device CAN operate over a very wide o o temperature range of -40 C to +85 C and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs By AMI Semiconductor, Inc.
N02L1618C1A-DS 's PackagesN02L1618C1A-DS 's pdf datasheet
N02L1618C1AB
N02L1618C1AB2
N02L1618C1AT2
N02L1618C1AT




N02L1618C1A-DS Pinout, Pinouts
N02L1618C1A-DS pinout,Pin out
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