2Mb Ultra-Low Power Asynchronous CMOS SRAMThe N02L63W2A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductors advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and CAN also be used to
deselect the device. The N02L63W2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device CAN operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs By ON Semiconductor
|
|
N02L63W2A Pb-Free | N02L63W2A Cross Reference | N02L63W2A Schematic | N02L63W2A Distributor |
N02L63W2A Application Notes | N02L63W2A RoHS | N02L63W2A Circuits | N02L63W2A footprint |