4Mb Ultra-Low Power Asynchronous CMOS SRAM

The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductors advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as AMIs N04L163WC1A which is processed to operate at higher voltages. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and CAN also be used to deselect the device. The N04L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device CAN operate over a very wide o o temperature range of -40 C to +85 C and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs By AMI Semiconductor, Inc.
N04L1618C2A-DS 's PackagesN04L1618C2A-DS 's pdf datasheet
N04L1618C2AB BGA
N04L1618C2AB2 BGA




N04L1618C2A-DS Pinout, Pinouts
N04L1618C2A-DS pinout,Pin out
This is one package pinout of N04L1618C2A-DS,If you need more pinouts please download N04L1618C2A-DS's pdf datasheet.

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