4mb Ultra-low Power Asynchronous Cmos Srams 256k ??

The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductors advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and CAN also be used to deselect the device. The N04L1630C2B is optimized for the ultimate in low power and is suited for various applications where ultra-low- power is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves operating power while improving the performance over standard SRAMs The device CAN operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs By AMI Semiconductor, Inc.
N04L1630C2B 's PackagesN04L1630C2B 's pdf datasheet
N04L1630C2BB2
N04L1630C2BT2




N04L1630C2B Pinout, Pinouts
N04L1630C2B pinout,Pin out
This is one package pinout of N04L1630C2B,If you need more pinouts please download N04L1630C2B's pdf datasheet.

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