4Mb Ultra-Low Power Asynchronous CMOS SRAM

The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductors advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N04L163WC1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device CAN operate over a very wide o o temperature range of -40 C to +85 C and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs By AMI Semiconductor, Inc.
N04L163WC1A 's PackagesN04L163WC1A 's pdf datasheet
N04L163WC1AB BGA
N04L163WC1AT TSOP
N04L163WC1AB2 BGA
N04L163WC1AT2 TSOP




N04L163WC1A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
N04L163WC1A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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