4Mb Ultra-Low Power Asynchronous CMOS SRAMThe N04L163WC2A is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductors advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and CAN also be used to
deselect the device. The N04L163WC2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device CAN operate over a very wide
o o
temperature range of -40 C to +85 C and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs By AMI Semiconductor, Inc.
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N04L163WC2A Pb-Free | N04L163WC2A Cross Reference | N04L163WC2A Schematic | N04L163WC2A Distributor |
N04L163WC2A Application Notes | N04L163WC2A RoHS | N04L163WC2A Circuits | N04L163WC2A footprint |