8Mb Ultra-Low Power Asynchronous CMOS SRAM

The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductors advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and CAN also be used to deselect the device. The N08L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device CAN operate over a very wide o o temperature range of -40 C to +85 C and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs By AMI Semiconductor, Inc.
N08L1618C2A 's PackagesN08L1618C2A 's pdf datasheet
N08L1618C2AB BGA
N08L1618C2AB2 BGA

N08L1618C2A Pinout, Pinouts
N08L1618C2A pinout,Pin out
This is one package pinout of N08L1618C2A,If you need more pinouts please download N08L1618C2A's pdf datasheet.

N08L1618C2A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

N08L1618C2A Pb-Free N08L1618C2A Cross Reference N08L1618C2A Schematic N08L1618C2A Distributor
N08L1618C2A Application Notes N08L1618C2A RoHS N08L1618C2A Circuits N08L1618C2A footprint
Hot categories