• Product pinout
  • Description
  • KFH8GH6Q4M,4Gb Flex-OneNAND M-die
  • Flex-OneNAND KFG4GH6x4M KFH8GH6x4M KFWAGH6x4M is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. The chip integrates system features including: , A BootRAM(1KB) and bootloader , 4KB DataRAM ...
  • KFH8GH6U4M,4Gb Flex-OneNAND M-die
  • Flex-OneNAND, is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface.( KFG4GH6Q4M KFG4GH6U4M KFH8GH6Q4M KFH8GH6U4M KFWAGH6Q4M KFWAGH6U4M ) The chip integrates system features including: , A BootRAM(1KB) ...
  • KFM4GH6Q4M,4Gb Flex-MuxOneNAND M-die
  • Flex-MuxOneNAND, is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. KFM4GH6Q4M KFN8GH6Q4M KFKAGH6Q4M The chip integrates system features including: , A BootRAM(1KB) and bootloader , 4KB ...
  • KFG4GH6Q4M,4Gb Flex-OneNAND M-die
  • Flex-OneNAND, is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. KFG4GH6Q4M KFG4GH6U4M KFH8GH6Q4M KFH8GH6U4M KFWAGH6Q4M KFWAGH6U4M The chip integrates system features including: , A BootRAM(1KB) and ...
  • KFK8G16Q2M,2Gb MuxOneNAND M-die
  • Samsung offers a variety of Flash solutions including NAND Flash MuxOneNAND, and NOR Flash. Samsung offers Flash products both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. KFM2G16Q2M KFN4G16Q2M KFK8G16Q2M ...
  • KFW8G16Q2M,2Gb OneNAND M-die
  • Samsung offers a variety of Flash solutions including NAND Flash OneNAND, and NOR Flash. Samsung offers Flash products both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. To determine which Samsung Flash product ...
  • KFN4G16Q2A,2Gb MuxOneNAND A-die
  • Samsung offers a variety of Flash solutions including NAND Flash MuxOneNAND, and NOR Flash. Samsung offers Flash products both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. KFM2G16Q2A KFN4G16Q2A To determine ...
  • KFH4G16Q2A,2Gb OneNAND A-die
  • Samsung offers a variety of Flash solutions including NAND Flash OneNAND, and NOR Flash. Samsung offers Flash products both compo- nent and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. ...
  • KFW4G16Q2M,OneNAND FLASH MEMORY
  • OneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array. The chip integrates system features including: , A BootRAM and bootloader , Two independent bi-directional 2KB DataRAM buffers ...
  • KFN2G16Q2A,1Gb MuxOneNAND A-die
  • The MuxOneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFN2G16Q2M,MuxOneNAND FLASH MEMORY
  • The MuxOneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFH2G16Q2M,OneNAND FLASH MEMORY NAND Flash
  • The OneNAND KFH2G16Q2M is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFM1G16Q2B,1Gb MuxOneNAND B-die
  • The MuxOneNAND KFM1G16Q2B is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and ...
  • KFG1G16Q2B,1Gb OneNAND B-die
  • The OneNAND KFG1G16Q2B is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFG1G16Q2A,1Gb OneNAND A-die
  • The OneNAND KFG1G16Q2A is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFM1G16Q2M,MuxOneNAND FLASH MEMORY
  • The MuxOneNAND KFM1G16Q2M is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and ...
  • KFG1G16U2B,1Gb OneNAND B-die
  • The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFM1216Q2B,512Mb MuxOneNAND B-die
  • The MuxOneNAND KFM1216Q2B is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and ...
  • KFG1216Q2B,512Mb OneNAND B-die
  • The OneNAND KFG1216Q2B is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFG1216U2B,512Mb OneNAND B-die FLASH MEMORY
  • The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFM1216Q2A,MuxOneNAND FLASH MEMORY
  • The MuxOneNAND KFM1216Q2A is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, ...
  • KFG1216U2A,OneNAND FLASH MEMORY
  • The OneNAND KFG1216U2A is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFG1216Q2A,OneNAND FLASH MEMORY
  • The OneNAND KFG1216Q2A is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a ...
  • KFG1216Q2M,OneNAND SPECIFICATION
  • OneNAND is a single-die chip with standard NOR Flash interface using NAND Flash Array. This device is comprised of logic and NAND Flash Array and 5KB internal BufferRAM. 1KB BootRAM is used for reserving bootcode, and 4KB DataRAM is used for buff- ering ...
  • HY27US08281A,128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
  • The HYNIX HY27US08281A series is a 16Mx8bit with spare 4M bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that ...
  • HY27UF081G2A,1Gb NAND FLASH
  • The Hynix HY27UF081G2A HY27UF161G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided ...
  • HY27UG088G5M,8Gb NAND FLASH
  • The HYNIX HY27UG088G5M , HY27UG088GDM series is a 1Gx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.
    ...
  • HY27UF082G2A,2Gb NAND FLASH
  • The Hynix HY27UF082G2A HY27UF162G2A series is a 256Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.
    ...
  • HY27UF084G2M,4Gb NAND FLASH
  • The HYNIX HY27UF084G2M series is a 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.
    ...
  • HY27SS08561M,256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
  • The HYNIX HY27(U/S)SXX561M series is a family of non-volatile Flash memories that uses NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on ...
  • HY27SS08121M,512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
  • The HYNIX HY27SS08121M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on ...
  • HY27US08121A,512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
  • The HYNIX HY27US08121A series is a 64Mx8bit with spare 32Mx16 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The ...
  • S30ML-P,S30ML-P -Small Page ORNANDâ„¢ Flash Family
  • The S30MS-P is a 3.0V single voltage flash memory product manufactured using 90 nm MirrorBit technology. The S30ML512P is a 512Mb device, organized as 32M Words or 64MB. The S30ML256P is a 256Mb device, organized as 16M Words or 32MB. The S30ML128P is a 128Mb ...
  • S30MS-P,S30MS-P ORNANDTMFlash Family
  • The S30MS-P is a 1.8V single voltage flash memory product manufactured using 90 nm MirrorBit technology. The S30MS01GP is a 1Gb device, organized as 64M Words or 128MB. The S30MS512P is a 512Mb device, organized as 32M Words or 64MB.
    ...
  • S30MS-R,S30MS-P ORNANDTMFlash Family
  • The S30MS-R is a 1.8V single voltage flash memory product manufactured using 65 nm MirrorBit technology. The S30MS04GR is a 4Gb device, organized as 256M Words or 512MB. The S30MS02GR is a 2Gb device, organized as 128M Words or 256MB.The S30MS01GR is a 1Gb ...
  • K9D1G08V0M,64mb & 128mb Smartmediatm Card Semiconductor
  • Using NAND Flash memory, SmartMedia provides the most cost- effective solution for the solid state mass storage market. A pro- gram operation is implemented by the single page of 528 bytes in typical 200ms and an erase operation is done by the single block ...
  • K9F1208B0B,64m X 8 Bit Nand Flash Memory Semiconductor
  • Offered in 64Mx8bit the K9F1208B0B K9F1208U0B K9F1208R0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program ...
  • K9K8G08U1M,512m X 8 Bits / 1g X 8 Bits Nand Flash Memory
  • Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most cost- effective solution for the solid state application market. A program operation can be performed in typical 200s on the ...
  • K9F5608U0B,32m X 8 Bit , 16m X 16 Bit Nand Flash Memory
  • Offered in 32Mx8bit or 16Mx16bit, the K9F5608Q0B K9F5616Q0B K9F5608U0B K9F5608U0B K9F5608U0B K9F5616U0B K9F5616U0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective ...
  • K9F5608U0C,32m X 8 Bit 16m X 16 Bit Nand Flash Memory
  • Offered in 32Mx8bit or 16Mx16bit, the K9F5608D0C K9F5608Q0C K9F5608U0C K9F5616D0C K9F5616Q0C K9F5616U0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for ...
  • K9F6408Q0C,8m X 8 Bit Bit Nand Flash Memory Semiconductor
  • The K9F6408U0C K9F6408Q0C is a 8M(8,388,608)x8bit NAND Flash Memory with a spare 256K(262,144)x8bit. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program ...
  • K9F6408U0A,8m X 8 Bit Nand Flash Memory Semiconductor
  • The K9F6408U0A is a 8M(8,388,608)x8bit NAND Flash Mem- ory with a spare 256K(262,144)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms ...
  • K9K1208U0A,64m X 8 Bit Nand Flash Memory Semiconductor
  • The K9K1208U0A are a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528- byte page in typically ...
  • K9K1G08B0B,128m X 8 Bit Nand Flash Memory Semiconductor
  • The K9K1G08U0B K9K1G08R0B K9K1G08B0B is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4.096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in ...
  • K9K2G08U0A,256M X 8 Bit NAND Flash Memory
  • 256M x 8 Bit NAND Flash Memory ,Offered in 256Mx8bit the K9K2G08R0A K9K2G08U0A is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in ...
  • K9T1G08U0M,128m X 8 Bits Nand Flash Memory Semiconductor
  • Offered in 128Mx8bits, the K9T1G08U0M is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V Vcc. Its NAND cell pro- vides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical ...
  • S75WS-P,Based Mcp/pop Products
  • 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash (NOR Interface) S30MS-P (NAND Interface) ORNAND Flash pSRAM Type 2 ...