4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page, Multiplane Architecture, 1.8 V Or 3 V, NAND Flash Memories

The NAND04G-B2D and NAND08G-BXC are part of the NAND Flash 2112 byte/1056 word page family of non-volatile Flash Memories They use NAND cell technology have a density of 4 Gbits and 8 Gbits, respectively. The NAND04G-B2D memory array is split into 2 planes of 2048 blocks each. This multiplane architecture makes it possible to program 2 pages at a time (one in each plane), or to erase 2 blocks at a time (one in each plane). This feature reduces the average program and erase times by 50%. The NAND08G-BXC is a stacked device that combines two NAND04G-B2D dice, both of which feature a multiplane architecture. In the NAND08G-B2C devices, only one of the memory components CAN be enabled at a time, therefore, operations CAN only be performed on one of the memory components at any one time. In the NAND08G-B4C devices, each NAND04G-B2D die CAN be accessed independently using two sets of signals. By STMicroelectronics
NAND04GR3B2D 's PackagesNAND04GR3B2D 's pdf datasheet

NAND04GR3B2D Pinout, Pinouts
NAND04GR3B2D pinout,Pin out
This is one package pinout of NAND04GR3B2D,If you need more pinouts please download NAND04GR3B2D's pdf datasheet.

NAND04GR3B2D Application circuits
NAND04GR3B2D circuits
This is one application circuit of NAND04GR3B2D,If you need more circuits,please download NAND04GR3B2D's pdf datasheet.

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