N-Channel Enhancement Mode Field Effect Transistorhese N-channel enhancement mode power field
effect Transistors NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM Motor Controls and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed. By Fairchild Semiconductor
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NDB408A Pb-Free | NDB408A Cross Reference | NDB408A Schematic | NDB408A Distributor |
NDB408A Application Notes | NDB408A RoHS | NDB408A Circuits | NDB408A footprint |