N-Channel Enhancement Mode Field Effect TransistorThese N-channel enhancement mode power field
effect Transistors NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM Motor Controls and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed. By Fairchild Semiconductor
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NDB410A Pb-Free | NDB410A Cross Reference | NDB410A Schematic | NDB410A Distributor |
NDB410A Application Notes | NDB410A RoHS | NDB410A Circuits | NDB410A footprint |