N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect Transistors NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM Motor Controls and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. By Fairchild Semiconductor