N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect Transistors NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM Motor Controls and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. By Fairchild Semiconductor
NDB410A 's PackagesNDB410A 's pdf datasheet
NDP410A
NDP410AE
NDP410B
NDP410BE
NDB410AE
NDB410B
NDB410BE




NDB410A Pinout, Pinouts
NDB410A pinout,Pin out
This is one package pinout of NDB410A,If you need more pinouts please download NDB410A's pdf datasheet.

NDB410A Application circuits
NDB410A circuits
This is one application circuit of NDB410A,If you need more circuits,please download NDB410A's pdf datasheet.


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