N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect Transistors NDP508A / NDP508AE / NDP508B / NDP508BE NDB508A / NDB508AE / NDB508B / NDB508BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM Motor Controls and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. By Fairchild Semiconductor
NDB508A 's PackagesNDB508A 's pdf datasheet
NDP508A
NDP508AE
NDP508B
NDP508BE
NDB508AE
NDB508B
NDB508BE




NDB508A Pinout, Pinouts
NDB508A pinout,Pin out
This is one package pinout of NDB508A,If you need more pinouts please download NDB508A's pdf datasheet.

NDB508A Application circuits
NDB508A circuits
This is one application circuit of NDB508A,If you need more circuits,please download NDB508A's pdf datasheet.


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