N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect Transistors NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM Motor Controls and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. By Fairchild Semiconductor
NDB510A 's PackagesNDB510A 's pdf datasheet
NDP510A
NDP510AE
NDP510B
NDP510BE
NDB510AE
NDB510B
NDB510BE




NDB510A Pinout, Pinouts
NDB510A pinout,Pin out
This is one package pinout of NDB510A,If you need more pinouts please download NDB510A's pdf datasheet.

NDB510A Application circuits
NDB510A circuits
This is one application circuit of NDB510A,If you need more circuits,please download NDB510A's pdf datasheet.


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