N-Channel Enhancement Mode Field Effect Transistor

These N-channel enhancement mode power field effect Transistors NDP610A / NDP610AE / NDP610B / NDP610BE NDB610A / NDB610AE / NDB610B / NDB610BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM Motor Controls and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. By Fairchild Semiconductor
NDB610A 's PackagesNDB610A 's pdf datasheet
NDP610A
NDP610AE
NDP610B
NDP610BE
NDB610AE
NDB610B
NDB610BE




NDB610A Pinout, Pinouts
NDB610A pinout,Pin out
This is one package pinout of NDB610A,If you need more pinouts please download NDB610A's pdf datasheet.

NDB610A Application circuits
NDB610A circuits
This is one application circuit of NDB610A,If you need more circuits,please download NDB610A's pdf datasheet.


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